1517-110M Microsemi Corporation
Виробник: Microsemi Corporation
Description: RF TRANS NPN 70V 1.65GHZ 55AW-1
Packaging: Bulk
Package / Case: 55AW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Gain: 7.3dB ~ 8.6dB
Power - Max: 350W
Current - Collector (Ic) (Max): 9A
Voltage - Collector Emitter Breakdown (Max): 70V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.48GHz ~ 1.65GHz
Supplier Device Package: 55AW-1
Description: RF TRANS NPN 70V 1.65GHZ 55AW-1
Packaging: Bulk
Package / Case: 55AW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Gain: 7.3dB ~ 8.6dB
Power - Max: 350W
Current - Collector (Ic) (Max): 9A
Voltage - Collector Emitter Breakdown (Max): 70V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.48GHz ~ 1.65GHz
Supplier Device Package: 55AW-1
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Технічний опис 1517-110M Microsemi Corporation
Description: RF TRANS NPN 70V 1.65GHZ 55AW-1, Packaging: Bulk, Package / Case: 55AW-1, Mounting Type: Chassis Mount, Transistor Type: NPN, Gain: 7.3dB ~ 8.6dB, Power - Max: 350W, Current - Collector (Ic) (Max): 9A, Voltage - Collector Emitter Breakdown (Max): 70V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V, Frequency - Transition: 1.48GHz ~ 1.65GHz, Supplier Device Package: 55AW-1.
Інші пропозиції 1517-110M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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1517-110M | Виробник : Microsemi |
 RF Bipolar Transistors S-Band/Bipolar Radar Transistor |
товару немає в наявності |