15KP100A MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE 100VWM 161.3VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111.7V
Voltage - Clamping (Max) @ Ipp: 161.3V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 753.09 грн |
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Технічний опис 15KP100A MDE Semiconductor Inc
Description: TVS DIODE 100VWM 161.3VC P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 93.6A, Voltage - Reverse Standoff (Typ): 100V, Supplier Device Package: P600, Unidirectional Channels: 1, Voltage - Breakdown (Min): 111.7V, Voltage - Clamping (Max) @ Ipp: 161.3V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції 15KP100A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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15KP100A | Виробник : CDIL |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 111.7V; 93.6A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 100V Breakdown voltage: 111.7V Max. forward impulse current: 93.6A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товару немає в наявності |
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15KP100A | Виробник : CDIL |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 15kW; 111.7V; 93.6A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 100V Breakdown voltage: 111.7V Max. forward impulse current: 93.6A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
товару немає в наявності |