1E4G SMC Diode Solutions
Виробник: SMC Diode SolutionsDescription: 200V, 1A, R-1, ULTRA FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Технічний опис 1E4G SMC Diode Solutions
Description: 200V, 1A, R-1, ULTRA FAST RECOVE, Packaging: Tape & Reel (TR), Package / Case: R-1, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: R-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
Інші пропозиції 1E4G
| Фото | Назва | Виробник | Інформація |
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1E4G | Виробник : SMC Diode Solutions |
Description: 200V, 1A, R-1, ULTRA FAST RECOVE Packaging: Cut Tape (CT) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: R-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |