Технічний опис 1N1183R GeneSiC Semiconductor
Description: DIODE GEN PURP REV 50V 35A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-5, Operating Temperature - Junction: -65°C ~ 190°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Інші пропозиції 1N1183R
| Фото | Назва | Виробник | Інформація |
Доступність |
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| 1N1183R | Виробник : GeneSiC Semiconductor |
 Description: DIODE GEN PURP REV 50V 35A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
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| 1N1183R | Виробник : Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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1N1183R | Виробник : GeneSiC Semiconductor |
Rectifiers 50V 35A REV Leads Std. Recovery |
товару немає в наявності |
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1N1183R | Виробник : Microchip Technology |
Rectifiers Std Rectifier |
товару немає в наявності |