Технічний опис 1N3660R Microchip Technology
Description: DIODE GEN PURP REV 100V 35A DO21, Packaging: Bulk, Package / Case: DO-208AA, Mounting Type: Press Fit, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-21, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Інші пропозиції 1N3660R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 1N3660R | Виробник : Microchip Technology |
 Description: DIODE GEN PURP REV 100V 35A DO21Packaging: Bulk Package / Case: DO-208AA Mounting Type: Press Fit Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
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| 1N3660R | Виробник : Microchip Technology |
Rectifiers Std Rectifier |
товару немає в наявності |