1N3768 GeneSiC Semiconductor

Description: DIODE GEN PURP 1KV 35A DO5, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 190°C, Supplier Device Package: DO-5, Current - Average Rectified (Io): 35A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AB, DO-5, Stud, Packaging: Bulk.