1N3892R GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 12A
Technology: Standard, Reverse Polarity
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 1+ | 683.44 грн |
| 10+ | 534.22 грн |
| 25+ | 491.76 грн |
| 100+ | 407.07 грн |
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Технічний опис 1N3892R GeneSiC Semiconductor
Description: DIODE GEN PURP REV 400V 12A DO4, Current - Reverse Leakage @ Vr: 25 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 12A, Technology: Standard, Reverse Polarity, Reverse Recovery Time (trr): 200 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.
