1N4150W-G3-08 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 16+ | 20.93 грн |
| 23+ | 14.23 грн |
| 100+ | 7.86 грн |
| 500+ | 4.87 грн |
| 1000+ | 3.76 грн |
| 2500+ | 3.34 грн |
| 5000+ | 2.85 грн |
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Технічний опис 1N4150W-G3-08 Vishay Semiconductors
Description: DIODE STANDARD 50V 200MA SOD123, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-123, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOD-123, Packaging: Tape & Reel (TR).
Інші пропозиції 1N4150W-G3-08
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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1N4150W-G3-08 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 50V 200MA SOD123Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
товару немає в наявності |