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1N4150W-HE3-08

1N4150W-HE3-08 Vishay Semiconductors


Виробник: Vishay Semiconductors
Small Signal Switching Diodes 50 Volt 500mA 4ns
на замовлення 17012 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
18+18.25 грн
28+11.72 грн
100+6.42 грн
500+4.33 грн
1000+3.35 грн
2500+3.00 грн
5000+2.58 грн
Мінімальне замовлення: 18 шт
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Технічний опис 1N4150W-HE3-08 Vishay Semiconductors

Description: DIODE STANDARD 50V 200MA SOD123, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-123, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOD-123, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

Інші пропозиції 1N4150W-HE3-08

Фото Назва Виробник Інформація Доступність Ціна
1N4150W-HE3-08 1N4150W-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
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1N4150W-HE3-08 1N4150W-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1N4150W-HE3-08
1N4150W-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 200MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
1N4150W-HE3-08
1N4150W-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.