Технічний опис 1N4151W-E3-18 Vishay
Description: DIODE GEN PURP 50V 150MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA, Current - Reverse Leakage @ Vr: 50 nA @ 50 V.
Інші пропозиції 1N4151W-E3-18
| Фото | Назва | Виробник | Інформація |
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1N4151W-E3-18 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V |
товар відсутній |
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1N4151W-E3-18 | Виробник : Vishay Semiconductors | Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns |
товар відсутній |