
1N4151WS-HE3-18 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 50V 150MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис 1N4151WS-HE3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD323, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOD-323, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA, Current - Reverse Leakage @ Vr: 50 nA @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції 1N4151WS-HE3-18
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1N4151WS-HE3-18 | Виробник : Vishay Semiconductors |
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товару немає в наявності |