1N4153-1 Microchip Technology

Description: DIODE GEN PURP 50V 150MA DO35, Current - Reverse Leakage @ Vr: 50 nA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-35, Current - Average Rectified (Io): 150mA, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk.