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1N4448W-HE3-18

1N4448W-HE3-18 Vishay


1n4448w.pdf Виробник: Vishay
Rectifier Diode Small Signal Switching 100V 0.15A 4ns Automotive 2-Pin SOD-123 T/R
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Технічний опис 1N4448W-HE3-18 Vishay

Description: DIODE GEN PURP 75V 150MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 75, Grade: Automotive, Qualification: AEC-Q101.

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1N4448W-HE3-18 1N4448W-HE3-18 Виробник : Vishay 1n4448w.pdf Rectifier Diode Small Signal Switching 100V 0.15A 4ns Automotive AEC-Q101 2-Pin SOD-123 T/R
товар відсутній
1N4448W-HE3-18 1N4448W-HE3-18 Виробник : Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 75
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4448W-HE3-18 1N4448W-HE3-18 Виробник : Vishay Semiconductors Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
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