Технічний опис 1N4448W-HE3-18 Vishay
Description: DIODE GEN PURP 75V 150MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 75, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції 1N4448W-HE3-18
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
1N4448W-HE3-18 | Виробник : Vishay | Rectifier Diode Small Signal Switching 100V 0.15A 4ns Automotive AEC-Q101 2-Pin SOD-123 T/R |
товар відсутній |
||
1N4448W-HE3-18 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 75 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||
1N4448W-HE3-18 | Виробник : Vishay Semiconductors | Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns |
товар відсутній |