1N4947GP-E3/73 Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 7+ | 50.23 грн |
| 10+ | 32.77 грн |
| 100+ | 20.07 грн |
| 500+ | 17.49 грн |
| 1000+ | 14.07 грн |
| 3000+ | 12.82 грн |
| 9000+ | 11.64 грн |
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Технічний опис 1N4947GP-E3/73 Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO204AL, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-204AL (DO-41), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Cut Tape (CT).
Інші пропозиції 1N4947GP-E3/73
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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1N4947GP-E3/73 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 1A DO204ALCurrent - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
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