Технічний опис 1N5059TAP Vishay
Description: DIODE AVALANCHE 200V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Інші пропозиції 1N5059TAP
Фото | Назва | Виробник | Інформація |
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1N5059TAP | Виробник : Vishay |
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товару немає в наявності |
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1N5059TAP | Виробник : VISHAY |
![]() Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 4µs Max. forward impulse current: 50A Leakage current: 0.1mA кількість в упаковці: 15000 шт |
товару немає в наявності |
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1N5059TAP | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
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1N5059TAP | Виробник : Vishay Semiconductors |
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товару немає в наявності |
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1N5059TAP | Виробник : VISHAY |
![]() Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 4µs Max. forward impulse current: 50A Leakage current: 0.1mA |
товару немає в наявності |