1N5188/TR Microchip Technology
Виробник: Microchip TechnologyDescription: DIODE STANDARD 400V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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Технічний опис 1N5188/TR Microchip Technology
Description: DIODE FAST RECOVERY TH, Packaging: Tape & Box (TB), Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA, Current - Reverse Leakage @ Vr: 2 µA @ 400 V.
Інші пропозиції 1N5188/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 1N5188 TR | Виробник : Central Semiconductor Corp |
Description: DIODE FAST RECOVERY TH Packaging: Tape & Box (TB) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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1N5188/TR | Виробник : Microchip Technology |
Rectifiers Rectifier |
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