1N5189US/TR Microchip Technology
Виробник: Microchip TechnologyDescription: DIODE STANDARD 500V 3A EMELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: E-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис 1N5189US/TR Microchip Technology
Description: DIODE STANDARD 500V 3A EMELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: E-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 500 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 2 µA @ 500 V.
Інші пропозиції 1N5189US/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
1N5189US/TR | Виробник : Microchip Technology |
Description: DIODE STANDARD 500V 3A EMELF Packaging: Cut Tape (CT) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: E-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V |
товару немає в наявності |
|
| 1N5189US/TR | Виробник : Microchip Technology |
Rectifiers |
товару немає в наявності |