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1N5230A (DO-35)

1N5230A (DO-35) Microsemi Corporation

1N5221%20-%201N5281B,%20e3%20DO-35.pdf
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
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Технічний опис 1N5230A (DO-35) Microsemi Corporation

Description: DIODE ZENER 4.7V 500MW DO35, Part Status: Active, Supplier Device Package: DO-35, Impedance (Max) (Zzt): 19 Ohms, Voltage - Zener (Nom) (Vz): 4.7 V, Operating Temperature: -65°C ~ 175°C, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Tolerance: ±10%, Packaging: Bulk, Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA, Power - Max: 500 mW.