Технічний опис 1N5408GHA0G Taiwan Semiconductor
Description: DIODE GEN PURP 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - DC Reverse (Vr) (Max): 1000 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції 1N5408GHA0G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N5408GHA0G | Виробник : Taiwan Semiconductor |
 Diode 1KV 3A 2-Pin DO-201AD T/R Automotive AEC-Q101 |
товару немає в наявності |
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1N5408GHA0G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - DC Reverse (Vr) (Max): 1000 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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1N5408GHA0G | Виробник : Taiwan Semiconductor | Rectifiers 3A, 1000V, Standard Recovery Rectifier |
товару немає в наявності |