1N5420US Microchip Technology

Description: DIODE GEN PURP 600V 3A D-5B, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 400 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk.