Технічний опис 1N5551USE3/TR Microchip Technology
Description: DIODE GEN PURP 400V 3A B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Інші пропозиції 1N5551USE3/TR
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1N5551USE3/TR | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 400V 3A B SQ-MELFPackaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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1N5551USE3/TR | Виробник : Microchip Technology |
Rectifiers 400 V Std Rectifier |
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