Технічний опис 1N5553/TR Microchip Technology
Description: DIODE GENERAL PURPOSE TH, Packaging: Tape & Box (TB), Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Інші пропозиції 1N5553/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
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1N5553/TR | Виробник : Microchip Technology |
 Description: STD RECTIFIERPackaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
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| 1N5553 TR | Виробник : Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Tape & Box (TB) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
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1N5553/TR | Виробник : Microchip Technology |
Rectifiers Rectifier |
товару немає в наявності |