Технічний опис 1N5616/TR Microchip Technology
Description: DIODE GENERAL PURPOSE TH, Packaging: Tape & Box (TB), Package / Case: R-1, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 35pF @ 12V, 130kHz, Current - Average Rectified (Io): 1A, Supplier Device Package: GPR-1A, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 500 nA @ 400 V.
Інші пропозиції 1N5616/TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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1N5616/TR | Виробник : Microchip Technology |
 Switching Diode Rectifier |
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1N5616/TR | Виробник : Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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| 1N5616 TR | Виробник : Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Tape & Box (TB) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 130kHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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1N5616/TR | Виробник : Microchip Technology |
Rectifiers 400V 1A Std Rectifier THT TR |
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| 1N5616 TR | Виробник : Central Semiconductor | Central Semiconductor |
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