1N5618US/TR Microchip Technology

Description: DIODE GEN PURP 600V 1A D-5A, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Tape & Reel (TR).