1N5627-TAP Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 29.92 грн |
| 5000+ | 27.41 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
2500 шт
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Технічний опис 1N5627-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 100A; SOD64; Ammo Pack; 7.5us, Type of diode: rectifying, Max. off-state voltage: 0.8kV, Load current: 3A, Semiconductor structure: single diode, Case: SOD64, Mounting: THT, Max. forward voltage: 1V, Max. load current: 18A, Max. forward impulse current: 100A, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Reverse recovery time: 7.5µs, Manufacturer standard package: 2500pcs., Leakage current: 10µA, Capacitance: 60pF.
Інші пропозиції 1N5627-TAP за ціною від 32.29 грн до 90.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N5627-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 100A; SOD64; Ammo Pack; 7.5us Type of diode: rectifying Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Case: SOD64 Mounting: THT Max. forward voltage: 1V Max. load current: 18A Max. forward impulse current: 100A Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Reverse recovery time: 7.5µs Manufacturer standard package: 2500pcs. Leakage current: 10µA Capacitance: 60pF |
на замовлення 6933 шт: термін постачання 14-30 дні (днів) |
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1N5627-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 3641 шт: термін постачання 21-31 дні (днів) |
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1N5627-TAP | Vishay Semiconductors |
Rectifiers 3.0 Amp 800 Volt |
на замовлення 23024 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 1N5627-TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 100A; SOD64; Ammo Pack; 7.5us
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Case: SOD64
Mounting: THT
Max. forward voltage: 1V
Max. load current: 18A
Max. forward impulse current: 100A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 7.5µs
Manufacturer standard package: 2500pcs.
Leakage current: 10µA
Capacitance: 60pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 100A; SOD64; Ammo Pack; 7.5us
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Case: SOD64
Mounting: THT
Max. forward voltage: 1V
Max. load current: 18A
Max. forward impulse current: 100A
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Reverse recovery time: 7.5µs
Manufacturer standard package: 2500pcs.
Leakage current: 10µA
Capacitance: 60pF
на замовлення 6933 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.34 грн |
| 11+ | 41.14 грн |
| 100+ | 36.82 грн |
| 250+ | 34.71 грн |
| 500+ | 32.51 грн |
| 1N5627-TAP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 3641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.98 грн |
| 10+ | 62.47 грн |
| 100+ | 47.93 грн |
| 500+ | 35.38 грн |
| 1000+ | 32.29 грн |
| 1N5627-TAP |
|
Виробник: Vishay Semiconductors
Rectifiers 3.0 Amp 800 Volt
Rectifiers 3.0 Amp 800 Volt
на замовлення 23024 шт:
термін постачання 21-30 дні (днів)