1N5802US Microchip Technology

Description: DIODE GEN PURP 50V 1A D-5A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.