Технічний опис 1N5806USE3/TR Microchip Technology
Description: DIODE GEN PURP 150V 1A D-5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V.
Інші пропозиції 1N5806USE3/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
1N5806USe3/TR | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 150V 1A D-5APackaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
товару немає в наявності |
|
 |
1N5806USe3/TR | Виробник : Microchip Technology |
Rectifiers 160V 1A Lead-Free UFR,FRR SQ SMT TR |
товару немає в наявності |