Технічний опис 1N5820US Microsemi
Description: DIODE SCHOTTKY 20V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 20 V.
Інші пропозиції 1N5820US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
1N5820US | Виробник : Microchip Technology |
 Rectifier Diode Schottky 20V 3A 2-Pin E-MELF Bag |
товар відсутній |
|
 |
1N5820US | Виробник : Microchip Technology |
Rectifier Diode Schottky 20V 3A 2-Pin E-MELF Bag |
товар відсутній |
|
 |
1N5820US | Виробник : Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
товар відсутній |