Технічний опис 1N5820USE3 Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQMELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 20 V.
Інші пропозиції 1N5820USE3
| Фото | Назва | Виробник | Інформація |
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1N5820USE3 | Виробник : Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A B SQMELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
товару немає в наявності |
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| 1N5820USE3 | Виробник : Microchip Technology |
 Schottky Diodes & Rectifiers Small-Signal Schottky |
товару немає в наявності |