1N5830R GeneSiC Semiconductor

Description: DIODE SCHOTTKY REV 25V 25A DO4, Current - Reverse Leakage @ Vr: 2 mA @ 20 V, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A, Voltage - DC Reverse (Vr) (Max): 25 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 25A, Technology: Schottky, Reverse Polarity.