1N6081US Microchip Technology
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A GMELF
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 155°C
Supplier Device Package: G-MELF (D-5C)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, G
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис 1N6081US Microchip Technology
Description: DIODE STANDARD 150V 2A GMELF, Current - Reverse Leakage @ Vr: 10 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A, Voltage - DC Reverse (Vr) (Max): 150 V, Operating Temperature - Junction: -65°C ~ 155°C, Supplier Device Package: G-MELF (D-5C), Current - Average Rectified (Io): 2A, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, G, Packaging: Bulk.
