-Axial-Microchip.JPG "1N646/TR")
1N646/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 400MA DO35
Current - Reverse Leakage @ Vr: 200 nA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35 (DO-204AH)
Current - Average Rectified (Io): 400mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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Технічний опис 1N646/TR Microchip Technology
Description: DIODE GEN PURP 300V 400MA DO35, Current - Reverse Leakage @ Vr: 200 nA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Voltage - DC Reverse (Vr) (Max): 300 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-35 (DO-204AH), Current - Average Rectified (Io): 400mA, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Reel (TR).
