Технічний опис 1N647-1/TR Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 50 nA @ 400 V.
Інші пропозиції 1N647-1/TR
Фото | Назва | Виробник | Інформація |
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1N647-1/TR | Виробник : Microchip Technology |
Description: DIODE GEN PURP 400V 400MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 400 V |
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1N647-1/TR | Виробник : Microchip Technology | Rectifiers Switching Diode |
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