1N647-1E3/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Description: DIODE GEN PURP 400V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис 1N647-1E3/TR Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 200 nA @ 400 V.
Інші пропозиції 1N647-1E3/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
1N647-1E3/TR | Виробник : Microchip Technology |
 Rectifiers 400 V Signal or Computer Diode |
товару немає в наявності |