1N65G UMW
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.35 грн |
| 10+ | 42.18 грн |
| 25+ | 34.93 грн |
| 100+ | 25.13 грн |
| 250+ | 21.36 грн |
| 500+ | 19.04 грн |
| 1000+ | 16.82 грн |
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Технічний опис 1N65G UMW
Description: SOT-223 N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції 1N65G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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1N65G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| 1N65G |
|
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: SOT-223 N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.