1N6765 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 12A TO254
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-254
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
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Технічний опис 1N6765 Microchip Technology
Description: DIODE GEN PURP 200V 12A TO254, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-254, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 300pF @ 5V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-254-3, TO-254AA (Straight Leads), Packaging: Bulk, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active.
