Технічний опис 1N8030-GA GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 750MA TO257, Packaging: Tube, Package / Case: TO-257-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 76pF @ 1V, 1MHz, Current - Average Rectified (Io): 750mA, Supplier Device Package: TO-257, Operating Temperature - Junction: -55°C ~ 250°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 750 mA, Current - Reverse Leakage @ Vr: 5 µA @ 650 V.
Інші пропозиції 1N8030-GA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N8030-GA | Виробник : GeneSiC Semiconductor |
 Description: DIODE SIL CARB 650V 750MA TO257Packaging: Tube Package / Case: TO-257-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 76pF @ 1V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: TO-257 Operating Temperature - Junction: -55°C ~ 250°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 650 V |
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