1SS187,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.47 грн |
| 49+ | 6.08 грн |
| 100+ | 4.54 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.92 грн |
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Технічний опис 1SS187,LF Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: S-Mini, Current - Average Rectified (Io): 100mA, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
