Технічний опис 1SS193(TE85L,F) Toshiba
Category: SMD universal diodes, Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A, Type of diode: switching, Mounting: SMD, Max. off-state voltage: 85V, Load current: 0.1A, Reverse recovery time: 4ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Capacitance: 3pF, Case: SOT346, Max. forward voltage: 1.2V, Max. load current: 0.3A, Max. forward impulse current: 2A, Power dissipation: 0.15W, Kind of package: reel; tape, кількість в упаковці: 5 шт.
Інші пропозиції 1SS193(TE85L,F)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1SS193(TE85L,F) | Виробник : TOSHIBA |
![]() Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 3pF Case: SOT346 Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 2A Power dissipation: 0.15W Kind of package: reel; tape кількість в упаковці: 5 шт |
товару немає в наявності |
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![]() +1 |
1SS193(TE85L,F) | Виробник : TOSHIBA |
![]() Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 3pF Case: SOT346 Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 2A Power dissipation: 0.15W Kind of package: reel; tape |
товару немає в наявності |