1SS306TE85LF
Код товару: 85955
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Виробник:
Діоди, діодні мости, стабілітрони > Діоди супершвидкі
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Інші пропозиції 1SS306TE85LF за ціною від 48.71 грн до 122.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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1SS306TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 100MA SC-61BPackaging: Tape & Reel (TR) Package / Case: SC-61AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-61B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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1SS306TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 100MA SC-61BPackaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-61B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 9913 шт: термін постачання 21-31 дні (днів) |
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1SS306TE85LF | Toshiba |
Small Signal Switching Diodes 0.1A 200V Switching High-Speed Diode |
на замовлення 21243 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 1SS306TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC-61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE ARRAY GP 200V 100MA SC-61B
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 53.62 грн |
| 6000+ | 49.54 грн |
| 1SS306TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC-61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE ARRAY GP 200V 100MA SC-61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 9913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.28 грн |
| 10+ | 72.46 грн |
| 100+ | 48.71 грн |
| 1SS306TE85LF |
![]() |
Виробник: Toshiba
Small Signal Switching Diodes 0.1A 200V Switching High-Speed Diode
Small Signal Switching Diodes 0.1A 200V Switching High-Speed Diode
на замовлення 21243 шт:
термін постачання 21-30 дні (днів)



