Технічний опис 1SS361(TE85L,F) Toshiba
Category: SMD universal diodes, Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A, Type of diode: switching, Case: SOT416, Mounting: SMD, Max. off-state voltage: 85V, Load current: 0.1A, Semiconductor structure: common cathode; double, Max. forward voltage: 1.2V, Max. forward impulse current: 2A, Kind of package: reel; tape, Capacitance: 3pF, Reverse recovery time: 4ns, Power dissipation: 0.1W, Max. load current: 0.3A, Features of semiconductor devices: ultrafast switching, кількість в упаковці: 5 шт.
Інші пропозиції 1SS361(TE85L,F)
Фото | Назва | Виробник | Інформація |
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1SS361(TE85L,F) | Виробник : TOSHIBA |
![]() Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Case: SOT416 Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Semiconductor structure: common cathode; double Max. forward voltage: 1.2V Max. forward impulse current: 2A Kind of package: reel; tape Capacitance: 3pF Reverse recovery time: 4ns Power dissipation: 0.1W Max. load current: 0.3A Features of semiconductor devices: ultrafast switching кількість в упаковці: 5 шт |
товару немає в наявності |
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1SS361(TE85L,F) | Виробник : TOSHIBA |
![]() Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Case: SOT416 Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Semiconductor structure: common cathode; double Max. forward voltage: 1.2V Max. forward impulse current: 2A Kind of package: reel; tape Capacitance: 3pF Reverse recovery time: 4ns Power dissipation: 0.1W Max. load current: 0.3A Features of semiconductor devices: ultrafast switching |
товару немає в наявності |