Технічний опис 2ED2304S06FXLLA1 Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 17.5V, Input Type: CMOS, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-8-910, Rise / Fall Time (Typ): 48ns, 24ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 360mA, 700mA, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Інші пропозиції 2ED2304S06FXLLA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
2ED2304S06FXLLA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: CMOS High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-910 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 360mA, 700mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
|
2ED2304S06FXLLA1 | Infineon Technologies |
Gate Drivers 650V half-bridge 0.7A,integrated BSD |
товару немає в наявності |
В кошику од. на суму грн. |
| 2ED2304S06FXLLA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 2ED2304S06FXLLA1 |
![]() |
Виробник: Infineon Technologies
Gate Drivers 650V half-bridge 0.7A,integrated BSD
Gate Drivers 650V half-bridge 0.7A,integrated BSD
товару немає в наявності
В кошику
од. на суму грн.




