2EDL5013U2DXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-TSNP-12-5
Rise / Fall Time (Typ): 4.4ns, 3.5ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 3A, 5A
| Кількість | Ціна |
|---|---|
| 3+ | 113.44 грн |
| 10+ | 80.23 грн |
| 25+ | 72.93 грн |
| 100+ | 60.87 грн |
| 250+ | 57.27 грн |
| 500+ | 55.09 грн |
| 1000+ | 53.89 грн |
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Технічний опис 2EDL5013U2DXTMA1 Infineon Technologies
Description: IC GATE DRVR, Packaging: Tape & Reel (TR), Package / Case: 12-UFQFN, Supplier Device Package: PG-TSNP-12-5, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.5V ~ 5.5V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 120 V, Rise / Fall Time (Typ): 4.4ns, 3.5ns, Channel Type: Independent, Driven Configuration: High-Side, Low-Side, Number of Drivers: 2, Gate Type: GaN FET, MOSFET (N-Channel), Current - Peak Output (Source, Sink): 3A, 5A.
Інші пропозиції 2EDL5013U2DXTMA1
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2EDL5013U2DXTMA1 | Виробник : Infineon Technologies |
Description: IC GATE DRVR Packaging: Tape & Reel (TR) Package / Case: 12-UFQFN Supplier Device Package: PG-TSNP-12-5 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Rise / Fall Time (Typ): 4.4ns, 3.5ns Channel Type: Independent Driven Configuration: High-Side, Low-Side Number of Drivers: 2 Gate Type: GaN FET, MOSFET (N-Channel) Current - Peak Output (Source, Sink): 3A, 5A |
товару немає в наявності |
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| 2EDL5013U2DXTMA1 | Виробник : Infineon Technologies |
Optically Isolated Gate Drivers DRIVER IC |
товару немає в наявності |