Технічний опис 2N2484 TIN/LEAD Central Semiconductor
Description: 60V 50MA 360MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 360 mW.
Інші пропозиції 2N2484 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N2484 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 60V 50MA 360MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
товару немає в наявності |
|
 |
2N2484 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 60Vcbo 60Vceo 6V 50mA 360mW |
товару немає в наявності |