2N2604UB/TR Microchip Technology
Виробник: Microchip TechnologyDescription: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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Технічний опис 2N2604UB/TR Microchip Technology
Description: SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V, Supplier Device Package: UB, Part Status: Active, Current - Collector (Ic) (Max): 30 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 400 mW.
Інші пропозиції 2N2604UB/TR
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2N2604UB/TR | Виробник : Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
товару немає в наявності |
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| 2N2604UB/TR | Виробник : Microchip Technology |
Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |