Технічний опис 2N2857 TIN/LEAD Central Semiconductor
Description: 15V 40MA 200MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 12.5dB ~ 19dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Frequency - Transition: 1.9GHz, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: TO-72.
Інші пропозиції 2N2857 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N2857 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 15V 40MA 200MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 12.5dB ~ 19dB Power - Max: 200mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Supplier Device Package: TO-72 |
товару немає в наявності |
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2N2857 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW |
товару немає в наявності |