Технічний опис 2N2905A TIN/LEAD Central Semiconductor
Description: 60V 600MA 600MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Інші пропозиції 2N2905A TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2N2905A TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 60V 600MA 600MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
товару немає в наявності |
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2N2905A TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 60Vcbo 40Vceo 5V 0.6A 0.8W |
товару немає в наявності |