2N2907 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 40V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Description: 40V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
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Технічний опис 2N2907 TIN/LEAD Central Semiconductor Corp
Description: 40V 600MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.8 W.
Інші пропозиції 2N2907 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2N2907 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT 60Vcbo 40Vceo 5V 0.5A 400mW |
товару немає в наявності |