Технічний опис 2N2919U Microchip Technology
Description: TRANS 2NPN 60V 0.03A, Packaging: Bulk, Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: U.
Інші пропозиції 2N2919U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
~~6.jpg "2N2919U") |
2N2919U | Виробник : Microchip Technology |
Description: TRANS 2NPN 60V 0.03A Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: U |
товару немає в наявності |
|
| 2N2919U | Виробник : Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |