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2N2919U Microchip Technology
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: U
Description: TRANS 2NPN 60V 0.03A
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: U
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Технічний опис 2N2919U Microchip Technology
Description: TRANS 2NPN 60V 0.03A, Packaging: Bulk, Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: U.
Інші пропозиції 2N2919U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N2919U | Виробник : Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
товару немає в наявності |