Технічний опис 2N2920A MOT
Description: TRANS 2NPN 30MA 60V TO78-6, Packaging: Bulk, Package / Case: TO-78-6 Metal Can, Mounting Type: Through Hole, Transistor Type: 2 NPN (Dual), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 1.5W, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-78-6.
Інші пропозиції 2N2920A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2N2920A | Виробник : Microchip Technology |
 Description: DUAL SMALL-SIGNAL BJTPackaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 |
товару немає в наявності |
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2N2920A | Виробник : Central Semiconductor Corp |
Description: TRANS 2NPN 30MA 60V TO78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1.5W Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-78-6 |
товару немає в наявності |
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| 2N2920A | Виробник : Microchip Technology |
Bipolar Transistors - BJT Dual Small-Signal BJT |
товару немає в наявності |